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PD-94072
IRFIZ48V
HEXFET(R) Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description
l l
D
VDSS = 60V RDS(on) = 12m
G S
ID = 39A
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
39 27 290 43 0.29 20 72 15 5.3 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
3.5 65
Units
C/W
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02/12/01
IRFIZ48V
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Eas
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min. 60 --- --- 2.0 35 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.064 --- --- --- --- --- --- --- --- --- --- 7.6 200 157 166 4.5 7.5 1985 496 91
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 12.0 m VGS = 10V, ID = 43A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 43A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 72A 29 nC VDS = 48V 36 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 72A ns --- RG = 9.1 --- RD = 0.34, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 mJ IAS = 72A, L = 64mH
--- 780 170
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 39 --- --- showing the A G integral reverse --- --- 290 S p-n junction diode. --- --- 2.0 V TJ = 25C, IS = 72A, VGS = 0V --- 70 100 ns TJ = 25C, IF = 72A --- 155 233 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
This is a typical value at device destruction and represents
operation outside rated limits.
Starting TJ = 25C, L = 64H
RG = 25, IAS = 72A. (See Figure 12)
ISD 72A, di/dt 151A/s, VDD V(BR)DSS,
TJ 175C
This is a calculated value limited to TJ = 175C . Uses IRFZ48V data and test conditions. t = 60s, f = 60Hz
Pulse width 300s; duty cycle 2%. 2 www.irf.com
IRFIZ48V
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
4.5V
10
10
4.5V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 175C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
1000
3.0
ID = 72A
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 175 C
2.5
100
2.0
1.5
10
1.0
0.5
1 4 6 8
V DS = 25V 20s PULSE WIDTH 10 12 14
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFIZ48V
4000
20
3000
Crss = Cgd Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Cis = Cgs + Cgd, Cds SHORTED
ID = 72A V DS= 48V V DS= 30V V DS= 12V
15
C, Capacitance(pF)
Ciss
2000
10
1000
5
Coss Crss
0 1 10 100
0 0 20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
1000
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
ID , Drain Current (A)
TJ = 175 C
10us
100 100us
10
TJ = 25 C
10
1ms 10ms
1
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
1 1
TC = 25 C TJ = 175 C Single Pulse
10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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IRFIZ48V
RD
40
VDS VGS RG D.U.T.
+ VDD
I D , Drain Current (A)
30
-
10V
20
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.01 0.1 1
P DM t1 t2 10
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFIZ48V
EAS , Single Pulse Avalanche Energy (mJ)
400
15V
VDS
L
D R IV E R
300
ID 29A 51A BOTTOM 72A TOP
RG
20V
D .U .T
IA S tp
+ - VD D
A
200
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
100
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFIZ48V
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS Power MOSFETS
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IRFIZ48V
Package Outline
TO-220 Fullpak Outline Dimensions are shown in millimeters (inches)
10.60 (.417) 10.40 (.409) o 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE A D A S S IG N ME N TS 1 - G A TE 2 - D R A IN 3 - SOURCE
7.10 (.280) 6.70 (.263)
16.00 (.630) 15.80 (.622)
1.15 (.045) M IN . 1 2 3
NOTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D
A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M AM B 3X 0.48 (.019) 0.44 (.017)
B
2.85 (.112) 2.65 (.104)
M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189)
Part Marking Information
TO-220 Fullpak
E X A M P L E : T H IS IS A N IR F I8 4 0 G W ITH A S S E M B L Y LOT COD E E401
A
IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE
PART NUMBER IR F I8 4 0 G
E 40 1 92 45
D ATE CO DE (Y Y W W ) Y Y = YE A R W W = W EEK
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/01 8 www.irf.com

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